The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 15, 2015
Filed:
Apr. 26, 2013
Peking University, Beijing, CN;
Ru Huang, Beijing, CN;
Yinglong Huang, Beijing, CN;
Yimao Cai, Beijing, CN;
Yangyuan Wang, Beijing, CN;
Muxi Yu, Beijing, CN;
Peking University, Beijing, CN;
Abstract
A resistive memory having a leakage inhibiting characteristic and a method for fabricating the same, which can suppress a sneak current in a large scaled crossing array of a RRAM. A memory cell forming the resistive memory comprises a lower electrode, a first semiconductor-type oxide layer, a resistive material layer, a second semiconductor-type oxide layer and an upper electrode which are sequentially stacked. Each of the semiconductor-type oxide layers may be a semiconductor-type metal oxide or a semiconductor-type non-metal oxide. The sneak current may be effectively reduced by means of a Schottky barrier formed between the semiconductor-type oxide layer and the metal electrode, the fabrication process is easy to be implemented, and a high device integration degree can be achieved.