The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 22, 2013
Filed:
Jul. 04, 2011
Applicants:
RU Huang, Beijing, CN;
Jing Zhuge, Beijing, CN;
Jiewen Fan, Beijing, CN;
Yujie Ai, Beijing, CN;
Runsheng Wang, Beijing, CN;
Xin Huang, Beijing, CN;
Inventors:
Ru Huang, Beijing, CN;
Jing Zhuge, Beijing, CN;
Jiewen Fan, Beijing, CN;
Yujie Ai, Beijing, CN;
Runsheng Wang, Beijing, CN;
Xin Huang, Beijing, CN;
Assignee:
Peking University, Beijing, CN;
Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/338 (2006.01);
U.S. Cl.
CPC ...
Abstract
A method for fabricating a surrounding-gate silicon nanowire transistor with air sidewalls is provided. The method is compatible with the CMOS process; the introduced air sidewalls can reduce the parasitic capacitance effectively and increase the transient response characteristic of the device, thus being applicable to a high-performance logic circuit.