Company Filing History:
Years Active: 2013
Title: Innovations of Jing Zhuge in Silicon Nanowire Transistor Technology
Introduction
Jing Zhuge is a prominent inventor based in Beijing, China. He has made significant contributions to the field of semiconductor technology, particularly in the development of silicon nanowire transistors. With a total of two patents to his name, Zhuge's work focuses on enhancing the performance of logic circuits through innovative fabrication methods.
Latest Patents
Zhuge's latest patents include a "Method for fabricating surrounding-gate silicon nanowire transistor with air sidewalls." This method is compatible with the CMOS process and introduces air sidewalls that effectively reduce parasitic capacitance. This innovation enhances the transient response characteristics of the device, making it suitable for high-performance logic circuits. Another notable patent is the "Fabrication method for surrounding gate silicon nanowire transistor with air as spacers." This invention outlines a detailed process that includes isolation, photolithography, etching, and the formation of a nanowire, ultimately leading to the creation of a high-performance logic circuit.
Career Highlights
Jing Zhuge is affiliated with Peking University, where he continues to advance research in semiconductor technologies. His work has garnered attention for its practical applications in improving device performance and efficiency. Zhuge's innovative approaches have positioned him as a key figure in the field of nanotechnology.
Collaborations
Zhuge collaborates with notable colleagues, including Ru Huang and Jiewen Fan. Their combined expertise contributes to the advancement of research and development in semiconductor technologies.
Conclusion
Jing Zhuge's contributions to the field of silicon nanowire transistors demonstrate his commitment to innovation and excellence in semiconductor technology. His patents reflect a deep understanding of the complexities involved in enhancing device performance, making him a significant inventor in this domain.