The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 12, 2013
Filed:
Jul. 06, 2012
RU Huang, Beijing, CN;
Shuai Sun, Beijing, CN;
Yujie AL, Beijing, CN;
Jiewen Fan, Beijing, CN;
Runsheng Wang, Beijing, CN;
Xiaoyan Xu, Beijing, CN;
Ru Huang, Beijing, CN;
Shuai Sun, Beijing, CN;
Yujie Al, Beijing, CN;
Jiewen Fan, Beijing, CN;
Runsheng Wang, Beijing, CN;
Xiaoyan Xu, Beijing, CN;
Peking University, , CN;
Abstract
Disclosed herein is a method for fabricating an ultra fine nanowire, which relates to a manufacturing technology of a microelectronic semiconductor transistor. This method obtains a suspended ultra fine nanowire base on a combination of a mask blocking oxidation process and a stepwise oxidation process. A diameter of the suspended ultra fine nanowire fabricated by this method is precisely controlled to 20 nm by controlling a thickness of a deposited silicon nitride film and a time and temperature of the two oxidation process. Since a speed of a dry oxidation process is slower, the size of the final nanowire may be precisely controlled. This method can be used to fabricate an ultra fine nanowire with a lower cost and a higher applicability.