The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 14, 2020
Filed:
Mar. 20, 2017
Cadence Design Systems, Inc., San Jose, CA (US);
Peking University, Beijing, CN;
Alvin Chen, San Jose, CA (US);
Jushan Xie, San Jose, CA (US);
Si-Yu Liao, Beijing, CN;
Chunyi Huang, Beijing, CN;
Tianlei Guo, Beijing, CN;
Yanhui Li, Beijing, CN;
Runsheng Wang, Beijing, CN;
Shaofeng Guo, Beijing, CN;
Zhuoqing Yu, Beijing, CN;
Ru Huang, Beijing, CN;
CADENCE DESIGN SYSTEMS, INC., San Jose, CA (US);
Abstract
A method, a system and a non-transitory machine-readable storage medium are provided. In one or more aspects, a computer-implemented method for bias temperature instability (BTI) calculation of a device includes simulating the device, using an electronic design automation tool. The simulation includes determining a first degradation value after applying a first sequence of stress values to the device for a first plurality of time steps. The simulation further includes determining a first degradation recovery value after the first plurality of time steps. The simulation further includes determining a first recovered degradation value after the first plurality of time steps by combining the first degradation value and the first degradation recovery value. The first degradation value, the first degradation recovery value, and the first recovered degradation value are associated with one or more model parameters of the device. The simulation is a transient analysis simulation, and the device is a FINFET or MOSFET device.