The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 02, 2014
Filed:
Sep. 09, 2011
RU Huang, Beijing, CN;
Yujie Ai, Beijing, CN;
Zhihua Hao, Beijing, CN;
Shuangshuang Pu, Beijing, CN;
Jiewen Fan, Beijing, CN;
Shuai Sun, Beijing, CN;
Runsheng Wang, Beijing, CN;
Xiaoyan Xu, Beijing, CN;
Ru Huang, Beijing, CN;
Yujie Ai, Beijing, CN;
Zhihua Hao, Beijing, CN;
Shuangshuang Pu, Beijing, CN;
Jiewen Fan, Beijing, CN;
Shuai Sun, Beijing, CN;
Runsheng Wang, Beijing, CN;
Xiaoyan Xu, Beijing, CN;
Peking University, Beijing, CN;
Abstract
Disclosed herein is a field effect transistor with a vertical channel and a fabrication method thereof. A channel region of the field effect transistor is a circular ring-shaped Si platform, which is formed over a substrate and perpendicular to the substrate; a source, which is made of polysilicon, is located at an upper end of the Si platform; a drain is disposed at an outside of a lower end of the circular ring-shaped Si platform; a gate is placed on an outer side surface of the circular ring-shaped Si platform; and an inside of the circular ring-shaped Si platform is filled with a dielectric material. In comparison with the conventional vertical structure MOSFET with a Si platform, the circular ring-shaped structure field effect transistor according to the invention can effectively suppress the short channel effect and improve the device performance.