The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 04, 2014
Filed:
Nov. 30, 2011
RU Huang, Beijing, CN;
Fei Tan, Beijing, CN;
Xia an, Beijing, CN;
Qianqian Huang, Beijing, CN;
Dong Yang, Beijing, CN;
Xing Zhang, Beijing, CN;
Ru Huang, Beijing, CN;
Fei Tan, Beijing, CN;
Xia An, Beijing, CN;
Qianqian Huang, Beijing, CN;
Dong Yang, Beijing, CN;
Xing Zhang, Beijing, CN;
Peking University, Beijing, CN;
Abstract
A CMOS device for reducing a radiation-induced charge collection and a method for fabricating the same. In the CMOS device, a heavily doped charge collection-suppressed region is disposed directly under the source region and the drain region. The region has a doping type opposite that of the source region and the drain region, and has a doping concentration not less than that of the source region and the drain region. The charge collection-suppressed region has a lateral part slightly less than or equal to that of the source region and the drain region, and has a lateral range toward to the channel not exceed the edges of the source region and the drain region. The CMOS device may greatly reduce a range of the funnel that appears under the action of a single particle, so that charges collected instantaneously under a force of an electric field may be reduced.