The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 01, 2016
Filed:
Sep. 30, 2013
Peking University, Beijing, CN;
Ru Huang, Beijing, CN;
Meng Lin, Beijing, CN;
Zhiqiang Li, Beijing, CN;
Xia An, Beijing, CN;
Ming Li, Beijing, CN;
Quanxin Yun, Beijing, CN;
Min Li, Beijing, CN;
Pengqiang Liu, Beijing, CN;
Xing Zhang, Beijing, CN;
Peking University, Beijing, CN;
Abstract
The present invention discloses a preparation method of a germanium-based Schottky junction, comprising, cleaning a surface of N-type germanium-based substrate, then depositing a layer of CeOon the surface, and further depositing a layer of metal. The stability Ce—O—Ge bonds can be formed at the interface after rare earth oxides CeOare in contact with the germanium substrate, and this is beneficial to reduce the interface state density, improve the quality of the interface, and reduce the MIGS and suppress Fermi-level pinning. Meanwhile, the tunneling resistance introduced by CeObetween the metal and the germanium substrate is smaller relative to the case of SiN, AlO, GeNor the like. In view of the excellent surface characteristics and small conduction band offset relative to the germanium substrate, interposing of the CeOdielectric layer is applicable to the preparation the germanium-based Schottky junction having a low resistivity.