Company Filing History:
Years Active: 2012-2016
Title: Innovations of Quanxin Yun in Semiconductor Technology
Introduction
Quanxin Yun is a prominent inventor based in Beijing, China, known for his significant contributions to semiconductor technology. With a total of six patents to his name, Yun has made strides in the development of germanium-based devices, which are crucial for modern electronics.
Latest Patents
Among his latest patents, the "Preparation method of a germanium-based Schottky junction" stands out. This invention details a method that involves cleaning the surface of an N-type germanium-based substrate, depositing a layer of CeO, and further adding a layer of metal. The resulting stability of Ce—O—Ge bonds at the interface enhances the quality of the junction, reducing interface state density and improving overall performance. Another notable patent is the "Method for processing gate dielectric layer deposited on germanium-based or group III-V compound-based substrate." This method employs a plasma process using fluorine plasma to optimize the gate dielectric layer, which is essential for the efficiency of semiconductor devices.
Career Highlights
Quanxin Yun is affiliated with Peking University, where he continues to advance research in semiconductor technologies. His work has garnered attention for its innovative approaches to improving device performance and reliability.
Collaborations
Yun collaborates with esteemed colleagues such as Ru Huang and Xia An, contributing to a dynamic research environment that fosters innovation in the field of semiconductor technology.
Conclusion
In summary, Quanxin Yun's contributions to semiconductor technology through his patents and research at Peking University highlight his role as a leading inventor in the field. His innovative methods for enhancing germanium-based devices are paving the way for future advancements in electronics.
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