The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 21, 2015
Filed:
Nov. 30, 2011
RU Huang, Beijing, CN;
Dong Yang, Beijing, CN;
Xia an, Beijing, CN;
Xing Zhang, Beijing, CN;
Peking University, Beijing, CN;
Abstract
A method for predicting a reliable lifetime of a SOI MOSFET device including: measuring a relationship of a gate resistance of the device varying as a function of a temperature at different wafer temperatures; performing a lifetime accelerating test on the device at different wafer temperatures, so as to obtain a degenerating relationship of a parameter representing the lifetime of the device as a function of stress time, and obtain a lifetime in the presence of self-heating when the parameter degenerates to 10%; performing a self-heating correction on the measured lifetime of the device by using the measured self-heating temperature and an Arrhenius model, so as to obtain a lifetime without self-heating influence; performing a self-heating correction on a variation of the drain current caused by self-heating; performing a self-heating correction on an impact ionization rate caused by hot carriers; and predicting the lifetime of the device under a bias.