The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 03, 2026
Filed:
Apr. 24, 2023
Applicant:
Peking University, Beijing, CN;
Inventors:
Assignee:
PEKING UNIVERSITY, Beijing, CN;
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
G11C 15/04 (2006.01);
U.S. Cl.
CPC ...
G11C 15/046 (2013.01);
Abstract
Disclosed is a method for implementing a content addressable memory based on an ambipolar FET, wherein a linear non-separable comparison operation required for a CAM cell is realized based on a single ambipolar FET with a threshold voltage through interposing a memory layer between a gate dielectric layer and a control gate of the ambipolar FET in source/drain symmetry to modulate the threshold voltage for information storage and through utilizing its non-monotonic transfer characteristics for input search.