The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 26, 2025
Filed:
Aug. 12, 2022
Peking University, Beijing, CN;
Qianqian Huang, Beijing, CN;
Kaifeng Wang, Beijing, CN;
Zhiyuan Fu, Beijing, CN;
Ru Huang, Beijing, CN;
PEKING UNIVERSITY, Beijing, CN;
Abstract
Disclosed is an embedded semiconductor random access memory structure, including a hafnium oxide-based ferroelectric storage element suitable for storing information, and a tunneling field effect transistor connected to the storage element. The tunneling field effect transistor is suitable for controlling the hafnium oxide-based ferroelectric storage element to perform read and write operations. A semiconductor memory array can be formed by repeating the above memory structures. A control method for the memory structure includes steps of writing 0, writing 1, reading, and writing back.