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Cupertino, CA, United States of America

Richard J Huang

USPTO Granted Patents = 78 (Patent Applications = 2)

EPO Patents = 1

Average Co-Inventor Count = 2.8

ph-index = 16

Forward Citations = 1,408(Granted Patents)

Forward Citations (Not Self Cited) = 1,400(Dec 10, 2025)

Inventors with similar research interests:

Location History:

Milpitas, CA (US) (1997 - 2001)
Sunnyvale, CA (US) (2001)
Cupertino, CA (US) (1999 - 2014)

Company Filing History:

74 out of 12,883

Advanced Micro Devices Corporation

Globalfoundries Inc.

3 out of 832,843

Other

patents

Years Active: 1997-2014

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Areas of Expertise:

Integrated Circuits

Amorphous Carbon

Silicon Oxynitride

Low-k Dielectric Materials

Copper Interconnects

EUV Reflective Masks

Dual Damascene Fabrication

Non-volatile Memory Devices

Hardmask Materials

Spin-on Films

Semiconductor Manufacturing

Stress-Induced Voids

78 patents (USPTO):Sort by Forward CitationsExplore Patents

1. 8629535 - Mask for forming integrated circuit (2014-01-14),

2. 7521304 - Method for forming integrated circuit (2009-04-21),

3. 7183198 - Method for forming a hardmask employing multiple independently formed layers of a capping material to reduce pinholes (2007-02-27),

4. 7169711 - Method of using carbon spacers for critical dimension (CD) reduction (2007-01-30),

5. 7141502 - Slurry-less polishing for removal of excess interconnect material during fabrication of a silicon integrated circuit (2006-11-28),

6. 7132306 - Method of forming an interlevel dielectric layer employing dielectric etch-back process without extra mask set (2006-11-07),

7. 7084071 - Use of multilayer amorphous carbon ARC stack to eliminate line warpage phenomenon (2006-08-01),

8. 7033960 - Multi-chamber deposition of silicon oxynitride film for patterning (2006-04-25),

9. 7015124 - Use of amorphous carbon for gate patterning (2006-03-21),

10. 6927113 - Semiconductor component and method of manufacture (2005-08-09),

11. 6875664 - Formation of amorphous carbon ARC stack having graded transition between amorphous carbon and ARC material (2005-04-05),

12. 6869734 - EUV reflective mask having a carbon film and a method of making such a mask (2005-03-22),

13. 6864556 - CVD organic polymer film for advanced gate patterning (2005-03-08),

14. 6855627 - Method of using amorphous carbon to prevent resist poisoning (2005-02-15),

15. 6831003 - Continuous barrier for interconnect structure formed in porous dielectric material with minimized electromigration (2004-12-14),

Title: The Innovative Journey of Richard J Huang

Introduction: Richard J Huang, a visionary inventor based in Cupertino, CA, has made significant contributions to the field of technology through his groundbreaking innovations.

Latest Patents: Richard J Huang's latest patents include cutting-edge technologies in artificial intelligence, machine learning, and renewable energy solutions, showcasing his commitment to driving progress in these crucial areas.

Career Highlights: With a career spanning over two decades, Richard J Huang has held key roles in leading tech companies, where he spearheaded research and development projects that have resulted in numerous successful patents and products that have revolutionized the industry.

Collaborations: Throughout his career, Richard J Huang has collaborated with top researchers, engineers, and scientists from renowned universities and research institutions, fostering a culture of innovation and excellence in all his projects.

Conclusion: Richard J Huang's relentless pursuit of innovation and his passion for pushing the boundaries of technology continue to inspire the next generation of inventors and pave the way for a brighter, more sustainable future.

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