The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 05, 2005
Filed:
Aug. 29, 2002
Richard J. Huang, Cupertino, CA (US);
Srikanteswara Dakshina-murthy, Austin, TX (US);
Philip A. Fisher, Foster City, CA (US);
Cyrus E. Tabery, Sunnyvale, CA (US);
LU You, San Jose, CA (US);
Richard J. Huang, Cupertino, CA (US);
Srikanteswara Dakshina-Murthy, Austin, TX (US);
Philip A. Fisher, Foster City, CA (US);
Cyrus E. Tabery, Sunnyvale, CA (US);
Lu You, San Jose, CA (US);
Advanced Micro Devices, Inc., Sunnyvale, CA (US);
Abstract
A method of forming an integrated circuit using an amorphous carbon hard mask involves providing an amorphous carbon material layer above a layer of conductive material and providing an anti-reflective coating (ARC) material layer above the amorphous carbon material. A transition region is formed intermediate the amorphous carbon material layer and the ARC material layer. The transition region has a concentration profile that provides a transition between the amorphous carbon material layer and the ARC material layer. A portion of the amorphous carbon material layer, the ARC material layer, and the transition region is removed to form a hard mask, and a feature is formed in the layer of conductive material according to the hard mask.