The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Feb. 15, 2005

Filed:

Dec. 04, 2002
Applicants:

Srikanteswara Dakshina-murthy, Austin, TX (US);

Scott A. Bell, San Jose, CA (US);

Richard J. Huang, Cupertino, CA (US);

Richard C. Nguyen, Fremont, CA (US);

Cyrus E. Tabery, Sunnyvale, CA (US);

Inventors:

Srikanteswara Dakshina-Murthy, Austin, TX (US);

Scott A. Bell, San Jose, CA (US);

Richard J. Huang, Cupertino, CA (US);

Richard C. Nguyen, Fremont, CA (US);

Cyrus E. Tabery, Sunnyvale, CA (US);

Assignee:

Advanced Micro Devices, Inc., Sunnyvale, CA (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L021/4763 ;
U.S. Cl.
CPC ...
Abstract

An exemplary embodiment relates to a method of using an amorphous carbon layer to prevent photoresist poisoning. The method includes doping a first amorphous carbon layer located above a substrate, providing an oxide layer above the first amorphous carbon layer where the oxide layer has a pinhole, and providing a second amorphous carbon layer adjacent to the oxide layer. The second amorphous carbon layer is undoped and the second amorphous carbon layer helps prevent photoresist poisoning.


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