The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 14, 2004
Filed:
May. 31, 2002
Richard J. Huang, Cupertino, CA (US);
Pin-Chin C. Wang, Menlo Park, CA (US);
Darrell M. Erb, Los Altos, CA (US);
Advanced Micro Devices, Inc., Sunnyvale, CA (US);
Abstract
For filling an interconnect opening within a porous dielectric material, a diffusion barrier material is deposited onto at least one sidewall of the interconnect opening. A thickness of the diffusion barrier material is equal to or greater than a radius of a pore opened at the sidewall to substantially fill the opened pore. The thickness of the diffusion barrier material is equal to or greater than a mean radius of pores opened at the sidewall to substantially fill a majority of the opened pores. Or, the thickness of the diffusion barrier material is equal to or greater than a radius of a largest pore opened at the sidewall to substantially fill all opened pores. The interconnect opening is then filled with a conductive fill material.