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For the Inventor, By the Inventor

Los Altos, CA, United States of America

Darrell M Erb

USPTO Granted Patents = 46

Average Co-Inventor Count = 2.4

ph-index = 15

Forward Citations = 669(Granted Patents)


Company Filing History:

goldMedal44 out of 12,867 
 
Advanced Micro Devices Corporation
 patents
silverMedal2 out of 832,680 
Other
 patents

Years Active: 1979-2007

where 'Filed Patents' based on already Granted Patents

46 patents (USPTO):
1. 7157795 - Composite tantalum nitride/tantalum copper capping layer (2007-01-02),
2. 7146588 - Predicting EM reliability by decoupling extrinsic and intrinsic sigma (2006-12-05),
3. 7132363 - Stabilizing fluorine etching of low-k materials (2006-11-07),
4. 7071564 - Composite tantalum capped inlaid copper with reduced electromigration and reduced stress migration (2006-07-04),
5. 6979625 - Copper interconnects with metal capping layer and selective copper alloys (2005-12-27),
6. 6869878 - Method of forming a selective barrier layer using a sacrificial layer (2005-03-22),
7. 6831003 - Continuous barrier for interconnect structure formed in porous dielectric material with minimized electromigration (2004-12-14),
8. 6768204 - Self-aligned conductive plugs in a semiconductor device (2004-07-27),
9. 6756306 - Low temperature dielectric deposition to improve copper electromigration performance (2004-06-29),
10. 6756303 - Diffusion barrier and method for its production (2004-06-29),
11. 6727592 - Copper interconnect with improved barrier layer (2004-04-27),
12. 6717266 - Use of an alloying element to form a stable oxide layer on the surface of metal features (2004-04-06),
13. 6689689 - Selective deposition process for allowing damascene-type Cu interconnect lines (2004-02-10),
14. 6500754 - Anneal hillock suppression method in integrated circuit interconnects (2002-12-31),
15. 6465889 - Silicon carbide barc in dual damascene processing (2002-10-15),

Title: Innovations and Contributions of Darrell M. Erb

Introduction

Darrell M. Erb is a prominent inventor based in Los Altos, California, known for his significant contributions to the field of semiconductor technology. With an impressive portfolio of 46 patents, Erb has made substantial advancements in the reliability and performance of semiconductor devices.

Latest Patents

One of Erb's latest patents is focused on a composite tantalum nitride/tantalum copper capping layer. This innovation addresses the challenges associated with electromigration and stress migration of copper interconnects. By creating a composite capping layer that includes tantalum nitride and alpha-tantalum, it effectively enhances the integrity of inlaid copper structures. Another critical invention involves predicting electromigration (EM) reliability through decoupling extrinsic and intrinsic components. This system allows for accurate reliability testing of semiconductor wafers, ensuring that variations in wafer fabrication processes can be quantified and managed effectively.

Career Highlights

Throughout his career, Darrell M. Erb has held key positions at renowned companies, including Advanced Micro Devices Corporation. His work in these roles has underscored his expertise and commitment to pushing the boundaries of semiconductor technology.

Collaborations

Erb has collaborated with notable professionals in the field, including Steven C. Avanzino and Robin W. Cheung. These partnerships have fostered innovative thinking and accelerated advancements in their respective projects.

Conclusion

Darrell M. Erb's contributions to the semiconductor industry through his inventions and patents demonstrate his remarkable influence in enhancing device reliability and efficiency. His ongoing work continues to pave the way for future innovations in technology.

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