The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Apr. 06, 2004

Filed:

Jun. 18, 2002
Applicant:
Inventors:

Amit P. Marathe, Milpitas, CA (US);

Darrell M. Erb, Los Altos, CA (US);

Assignee:

Advanced Micro Devices, Inc., Sunnyvale, CA (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 2/348 ; H01L 2/1283 ;
U.S. Cl.
CPC ...
H01L 2/348 ; H01L 2/1283 ;
Abstract

The electromigration resistance of planarized metallization patterns, for example copper, inlaid in the surface of a layer of dielectric material, is enhanced by a process comprising blanket-depositing on the planarized, upper surfaces of the metallization features and the dielectric layer at least one alloying layer comprising at least one alloying element for the metal of the features, and diffusing the at least one alloying element within the metallization features to effect alloying therewith. The at least one alloying element diffused within the metallization features, under conditions wherein an oxide layer forms on the surface of the metallization features, forms a stable oxide layer on the surface of the metallization features. The stable oxide layer reduces electromigration from the metallization features along the oxide layer.


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