The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 27, 2004
Filed:
Feb. 22, 2002
Applicant:
Inventors:
Christy Mei-Chu Woo, Cupertino, CA (US);
John E. Sanchez, Palo Alto, CA (US);
Darrell M. Erb, Los Altos, CA (US);
Amit P. Marathe, Milpitas, CA (US);
Assignee:
Advanced Micro Devices, Inc., Sunnyvale, CA (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 2/348 ; H01L 2/352 ; H01L 2/14763 ; H01L 2/144 ;
U.S. Cl.
CPC ...
H01L 2/348 ; H01L 2/352 ; H01L 2/14763 ; H01L 2/144 ;
Abstract
A Cu interconnect, e.g.; a dual damascene structure, is formed with improved electromigration resistance and increased via chain yield by depositing a barrier layer in an opening by CVD, depositing a flash layer of &agr;-Ta by PVD, at a thickness less than 30 Å, on the bottom of the barrier layer, depositing a seedlayer and then filling the opening with Cu. Embodiments include depositing a thin &agr;-Ta layer, as at a thickness less than 10 Å, and/or as discontinuous regions of clusters of atoms on sides of the opening.