The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 21, 2009
Filed:
Aug. 29, 2002
Richard J. Huang, Cupertino, CA (US);
Scott A. Bell, San Jose, CA (US);
Srikanteswara Dakshina-murthy, Austin, TX (US);
Philip A. Fisher, Foster City, CA (US);
Richard C. Nguyen, Fremont, CA (US);
Cyrus E. Tabery, Sunnyvale, CA (US);
LU You, San Jose, CA (US);
Richard J. Huang, Cupertino, CA (US);
Scott A. Bell, San Jose, CA (US);
Srikanteswara Dakshina-Murthy, Austin, TX (US);
Philip A. Fisher, Foster City, CA (US);
Richard C. Nguyen, Fremont, CA (US);
Cyrus E. Tabery, Sunnyvale, CA (US);
Lu You, San Jose, CA (US);
Advanced Micro Devices, Inc., Sunnyvale, CA (US);
Abstract
A method of forming an integrated circuit includes providing a buffer layer comprising a dielectric material above a layer of conductive material and providing a layer of mask material above the buffer layer. The mask material comprises amorphous carbon. The method also includes removing a portion of the buffer layer and the layer of mask material to form a mask. A feature is formed in the layer of conductive material according to the mask.