The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 07, 2006
Filed:
Dec. 08, 2003
Applicants:
Seung-hyun Rhee, New York, NY (US);
Richard J. Huang, Cupertino, CA (US);
Calvin T. Gabriel, Cupertino, CA (US);
Inventors:
Seung-Hyun Rhee, New York, NY (US);
Richard J. Huang, Cupertino, CA (US);
Calvin T. Gabriel, Cupertino, CA (US);
Assignee:
Advanced Micro Devices, Inc., Sunnyvale, CA (US);
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 21/00 (2006.01); H01L 21/311 (2006.01); H01L 21/302 (2006.01);
U.S. Cl.
CPC ...
Abstract
A method of forming an interlevel dielectric (ILD) layer forms a polymer sacrificial ILD on a substrate. After metallization structures are formed in the polymer sacrificial ILD layer, a low power etch back is performed on the sacrificial ILD layer. Dielectric material is non-conformally deposited as an ILD layer over the substrate and the metallization structures, forming air gaps between some of the metallization structures.