The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 08, 2005
Filed:
Dec. 31, 2002
LU You, San Jose, CA (US);
Marina V. Plat, San Jose, CA (US);
Chih Yuh Yang, San Jose, CA (US);
Scott A. Bell, San Jose, CA (US);
Richard J. Huang, Cupertino, CA (US);
Christopher F. Lyons, Fremont, CA (US);
Mark S. Chang, Los Altos, CA (US);
Marilyn I. Wright, Austin, TX (US);
Lu You, San Jose, CA (US);
Marina V. Plat, San Jose, CA (US);
Chih Yuh Yang, San Jose, CA (US);
Scott A. Bell, San Jose, CA (US);
Richard J. Huang, Cupertino, CA (US);
Christopher F. Lyons, Fremont, CA (US);
Mark S. Chang, Los Altos, CA (US);
Marilyn I. Wright, Austin, TX (US);
Advanced Micro Devices, Inc., Sunnyvale, CA (US);
Abstract
A bottom anti-reflective coating comprising an organic polymer layer having substantially no nitrogen and a low compressive stress in relation to a polysilicon layer is employed as the lower layer of a bi-layer antireflective coating/hardmask structure to reduce deformation of a pattern to be formed in a patternable layer. The organic polymer layer is substantially transparent to visible radiation, enabling better detection of alignment marks during a semiconductor device fabrication process and improving overlay accuracy. The organic polymer layer provides excellent step coverage and may be advantageously used in the fabrication of structures such as FinFETs.