The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 01, 2006
Filed:
Sep. 16, 2002
Srikanteswara Dakshina-murthy, Austin, TX (US);
Scott A. Bell, San Jose, CA (US);
Richard J. Huang, Cupertino, CA (US);
Richard C. Nguyen, Fremont, CA (US);
Cyrus E. Tabery, Sunnyvale, CA (US);
Srikanteswara Dakshina-Murthy, Austin, TX (US);
Scott A. Bell, San Jose, CA (US);
Richard J. Huang, Cupertino, CA (US);
Richard C. Nguyen, Fremont, CA (US);
Cyrus E. Tabery, Sunnyvale, CA (US);
Advanced Micro Devices, Inc., Sunnyvale, CA (US);
Abstract
A method of producing an integrated circuit includes providing a layer of polysilicon material above a semiconductor substrate and providing an amorphous carbon layer over the polysilicon material layer. The amorphous carbon layer comprises at least one undoped amorphous carbon layer and at least one doped amorphous carbon layer. A portion of the amorphous carbon layer is removed to form a hard mask, and the polysilicon material layer is etched according to the hard mask to form a line of polysilicon material.