The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jan. 30, 2007

Filed:

Jun. 13, 2002
Applicants:

Christopher F. Lyons, Fremont, CA (US);

Philip A. Fisher, Foster City, CA (US);

Richard J. Huang, Cupertino, CA (US);

Cyrus E. Tabery, Sunnyvale, CA (US);

Inventors:

Christopher F. Lyons, Fremont, CA (US);

Philip A. Fisher, Foster City, CA (US);

Richard J. Huang, Cupertino, CA (US);

Cyrus E. Tabery, Sunnyvale, CA (US);

Assignee:

Advanced Micro Devices, Inc., Sunnyvale, CA (US);

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 21/302 (2006.01);
U.S. Cl.
CPC ...
Abstract

A method of using carbon spacers for critical dimension reduction can include providing a patterned photoresist layer above a substrate where the patterned photoresist layer has an aperture with a first width, depositing a carbon film over the photoresist layer and etching the deposited carbon film to form spacers on lateral side walls of the aperture of the patterned photoresist layer, etching the substrate using the formed spacers and patterned photoresist layer as a pattern to form a trench having a second width, and removing the patterned photoresist layer and formed spacers using an oxidizing etch.


Find Patent Forward Citations

Loading…