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For the Inventor, By the Inventor

Obernberg/Inn, Austria

Peter Irsigler

USPTO Granted Patents = 57 

 

Average Co-Inventor Count = 3.9

ph-index = 4

Forward Citations = 52(Granted Patents)

DiyaCoin DiyaCoin = 0.06 


Inventors with similar research interests:


Location History:

  • Obemberg am Inn, AT (2015)
  • Obernberg am Inn, AT (2015 - 2020)
  • Obernberg, AT (2021)
  • Obernberg/lnn, AT (2021)
  • Obernberg/Inn, AT (2014 - 2024)

Company Filing History:

goldMedal43 out of 14,705 
 
Infineon Technologies Ag
 patents
silverMedal14 out of 2,093 
 
Infineon Technologies Austria Ag
 patents
bronzeMedal1 out of 7 
 
Technische Universitaet Graz
 patents
where one patent can have more than one assignee

Years Active: 2014-2024

where 'Filed Patents' based on already Granted Patents

57 patents (USPTO):
1. 12136670 - Semiconductor device having contact trenches extending from opposite sides of a semiconductor body (2024-11-05),
2. 12002804 - Half-bridge circuit including integrated level shifter transistor (2024-06-04),
3. 11506599 - Fluid sensor including an optical filter and a waveguide, and method for manufacturing the fluid sensor (2022-11-22),
4. 11286158 - MEMS-component (2022-03-29),
5. 11193885 - Gas sensor (2021-12-07),
6. 11158707 - Transistor device (2021-10-26),
7. 11081382 - Method for processing a substrate assembly and wafer composite structure (2021-08-03),
8. 11069626 - Molding compound and semiconductor package with a molding compound (2021-07-20),
9. 10833066 - Half-bridge circuit including a low-side transistor and a level shifter transistor integrated in a common semiconductor body (2020-11-10),
10. 10707865 - Switch device (2020-07-07),
11. 10670972 - Method and apparatus for exposing a structure on a substrate (2020-06-02),
12. 10665705 - Semiconductor device with deep diffusion region (2020-05-26),
13. 10607839 - Method of reducing an impurity concentration in a semiconductor body (2020-03-31),
14. 10566426 - Forming silicon oxide layers by radical oxidation and semiconductor device with silicon oxide layer (2020-02-18),
15. 10553675 - Isolation of semiconductor device with buried cavity (2020-02-04),

Title: Peter Irsigler - Innovative Inventor from Obernberg/Inn, AT

Introduction: Peter Irsigler is a renowned inventor hailing from Obernberg/Inn, Austria, known for his groundbreaking contributions to various fields through his innovative creations.

Latest Patents: Peter Irsigler holds several patents in the areas of renewable energy technologies, sustainable agriculture solutions, and advanced medical devices, showcasing his diverse range of expertise.

Career Highlights: With a career spanning over two decades, Peter Irsigler has consistently pushed the boundaries of innovation, leading to the development of cutting-edge products that have positively impacted industries worldwide.

Collaborations: Throughout his career, Peter Irsigler has collaborated with leading research institutions, universities, and multinational companies to bring his inventions to life, fostering a culture of innovation and excellence.

Conclusion: Peter Irsigler's passion for innovation and his relentless pursuit of excellence have solidified his position as a visionary inventor, shaping the future of technology and leaving a lasting impact on society.

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