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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 12002804 B1

PDFFull Text
Date of Patent:
Jun. 04, 2024

Filed:

Oct. 07, 2020

Half-bridge circuit including integrated level shifter transistor

Applicant:

Infineon Technologies Austria Ag, Villach, AT;

Inventors:

Armin Willmeroth, Friedberg, DE;

Franz Hirler, Isen, DE;

Peter Irsigler, Obernberg/Inn, AT;

Assignee:

Infineon Technologies Austria AG, Villach, AT;

Attorney:

Murphy, Bilak & Homiller, PLLC

Primary Examiner:

Moin M Rahman

Int. Cl.
CPC ...
H01L 29/06 (2006.01); H01L 21/8234 (2006.01); H01L 27/06 (2006.01); H01L 27/082 (2006.01); H01L 29/10 (2006.01); H01L 29/732 (2006.01); H01L 29/739 (2006.01); H01L 29/778 (2006.01); H01L 29/78 (2006.01); H01L 29/792 (2006.01); H01L 29/88 (2006.01); H01L 29/08 (2006.01); H01L 29/861 (2006.01); H10B 12/00 (2023.01);
U.S. Cl.
CPC ...
H01L 27/0629 (2013.01); H01L 21/823487 (2013.01); H01L 27/0828 (2013.01); H01L 29/0634 (2013.01); H01L 29/0696 (2013.01); H01L 29/10 (2013.01); H01L 29/1083 (2013.01); H01L 29/1095 (2013.01); H01L 29/732 (2013.01); H01L 29/7395 (2013.01); H01L 29/7788 (2013.01); H01L 29/78 (2013.01); H01L 29/7823 (2013.01); H01L 29/7926 (2013.01); H01L 29/88 (2013.01); H01L 27/0826 (2013.01); H01L 29/0692 (2013.01); H01L 29/0878 (2013.01); H01L 29/7803 (2013.01); H01L 29/7811 (2013.01); H01L 29/7813 (2013.01); H01L 29/7816 (2013.01); H01L 29/7825 (2013.01); H01L 29/7838 (2013.01); H01L 29/8611 (2013.01); H10B 12/0383 (2023.02); H10B 12/395 (2023.02);
Abstract

A semiconductor device includes a semiconductor body, a vertical transistor arranged in a first device region of the semiconductor body, and a lateral transistor arranged in a second device region of the semiconductor body. The vertical transistor includes a plurality of drift regions of a first doping type and a plurality of compensation regions of a second doping type complementary to the first doping type. The drift regions and the compensation regions are arranged alternately in a lateral direction of the semiconductor body. The second device region includes a well-like structure of the second doping type surrounding a first semiconductor region of the first doping type. The lateral transistor includes device regions arranged in the first semiconductor region.

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