The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 05, 2024
Filed:
May. 25, 2022
Applicant:
Infineon Technologies Ag, Neubiberg, DE;
Inventors:
Markus Zundel, Egmating, DE;
Andreas Meiser, Sauerlach, DE;
Hans-Peter Lang, Munich, DE;
Thorsten Meyer, Regensburg, DE;
Peter Irsigler, Obernberg/Inn, AT;
Assignee:
Infineon Technologies AG, Neubiberg, DE;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/74 (2006.01); H01L 21/02 (2006.01); H01L 21/762 (2006.01); H01L 21/8234 (2006.01); H01L 23/48 (2006.01); H01L 27/06 (2006.01); H01L 29/06 (2006.01); H01L 29/417 (2006.01); H01L 29/423 (2006.01); H01L 29/45 (2006.01); H01L 29/66 (2006.01); H01L 29/78 (2006.01); H01L 29/861 (2006.01); H01L 29/40 (2006.01);
U.S. Cl.
CPC ...
H01L 29/7813 (2013.01); H01L 21/02 (2013.01); H01L 21/743 (2013.01); H01L 21/762 (2013.01); H01L 21/76224 (2013.01); H01L 21/823475 (2013.01); H01L 23/48 (2013.01); H01L 27/0629 (2013.01); H01L 27/0694 (2013.01); H01L 29/06 (2013.01); H01L 29/417 (2013.01); H01L 29/41741 (2013.01); H01L 29/41766 (2013.01); H01L 29/4236 (2013.01); H01L 29/456 (2013.01); H01L 29/66477 (2013.01); H01L 29/66727 (2013.01); H01L 29/66734 (2013.01); H01L 29/78 (2013.01); H01L 29/7803 (2013.01); H01L 29/7827 (2013.01); H01L 29/7845 (2013.01); H01L 29/861 (2013.01); H01L 21/823418 (2013.01); H01L 29/0657 (2013.01); H01L 29/407 (2013.01); H01L 2924/0002 (2013.01);
Abstract
A method of manufacturing a semiconductor body includes forming a pattern at a first side of a substrate, forming a semiconductor layer on the first side of the substrate, attaching the substrate and the semiconductor layer to a carrier via a surface of the semiconductor layer, and removing the substrate from a second side opposite to the first side.