The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 18, 2020
Filed:
Dec. 20, 2017
Infineon Technologies Ag, Neubiberg, DE;
Anton Mauder, Kolbermoor, DE;
Oliver Hellmund, Neubiberg, DE;
Peter Irsigler, Obernberg/Inn, AT;
Jens Peter Konrath, Villach, AT;
David Laforet, Villach, AT;
Maik Langner, Dresden, DE;
Markus Neuber, Kesseldorf, DE;
Hans-Joachim Schulze, Taufkirchen, DE;
Ralf Siemieniec, Villach, AT;
Knut Stahrenberg, Dresden, DE;
Olaf Storbeck, Dresden, DE;
Infineon Technologies AG, , DE;
Abstract
A body structure and a drift zone are formed in a semiconductor layer, wherein the body structure and the drift zone form a first pn junction. A silicon nitride layer is formed on the semiconductor layer. A silicon oxide layer is formed from at least a vertical section of the silicon nitride layer by oxygen radical oxidation.