The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 31, 2020
Filed:
Jun. 28, 2017
Applicant:
Infineon Technologies Ag, Neubiberg, DE;
Inventors:
Hans-Joachim Schulze, Taufkirchen, DE;
Peter Irsigler, Obernberg/Inn, AT;
Thomas Wuebben, Unterschuett, AT;
Assignee:
Infineon Technologies AG, Neubiberg, DE;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/265 (2006.01); H01L 21/324 (2006.01); H01L 29/06 (2006.01); H01L 29/36 (2006.01); H01L 29/78 (2006.01); H01L 29/868 (2006.01); H01L 29/66 (2006.01); H01L 29/32 (2006.01); H01L 21/263 (2006.01);
U.S. Cl.
CPC ...
H01L 21/26526 (2013.01); H01L 21/263 (2013.01); H01L 21/26506 (2013.01); H01L 21/324 (2013.01); H01L 29/0638 (2013.01); H01L 29/32 (2013.01); H01L 29/36 (2013.01); H01L 29/66136 (2013.01); H01L 29/66734 (2013.01); H01L 29/7813 (2013.01); H01L 29/868 (2013.01); H01L 21/26533 (2013.01);
Abstract
A method includes kicking out impurity atoms from substitutional sites of a crystal lattice of a semiconductor body by implanting particles via a first surface into the semiconductor body, reducing a thickness of the semiconductor body by removing semiconductor material of the semiconductor body, and annealing the semiconductor body in a first annealing process at a temperature of between 300° C. and 450° C. to diffuse impurity atoms out of the semiconductor body.