Company Filing History:

27 out of 10,295

Tokyo Electron Limited

patents

2 out of 164,108

International Business Machines Corporation

patents

where one patent can have more than one assignee

Years Active: 2007-2016

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27 patents (USPTO):Sort by Forward Citations

Abstract keywords

1. 9466476 - Film-forming method for forming silicon oxide film on tungsten film or tungsten oxide film (2016-10-11),

2. 9460913 - Film-forming method for forming silicon oxide film on tungsten film or tungsten oxide film (2016-10-04),

3. 8734901 - Film deposition method and apparatus (2014-05-27),

4. 8673725 - Multilayer sidewall spacer for seam protection of a patterned structure (2014-03-18),

5. 8664102 - Dual sidewall spacer for seam protection of a patterned structure (2014-03-04),

6. 8658247 - Film deposition method (2014-02-25),

7. 8642486 - Thin film forming method, thin film forming apparatus, and program (2014-02-04),

8. 8591989 - SiCN film formation method and apparatus (2013-11-26),

9. 8563096 - Vertical film formation apparatus and method for using same (2013-10-22),

10. 8383522 - Micro pattern forming method (2013-02-26),

11. 8343594 - Film formation method and apparatus for semiconductor process (2013-01-01),

12. 8216648 - Film formation method and apparatus (2012-07-10),

13. 8178448 - Film formation method and apparatus for semiconductor process (2012-05-15),

14. 8168375 - Patterning method (2012-05-01),

15. 8080290 - Film formation method and apparatus for semiconductor process (2011-12-20),

Title: Innovations by Pao-Hwa Chou: A Journey Through Patents and Collaborations

Introduction

Pao-Hwa Chou is a notable inventor based in Nirasaki, Japan, whose contributions to technology are marked by an impressive portfolio of 27 patents. His work primarily focuses on advancements in film-forming methods, which have significant implications in various industrial applications.

Latest Patents

Among Chou's latest innovations is a groundbreaking film-forming method designed for creating silicon oxide films on tungsten films or tungsten oxide films. This method involves a detailed process that begins with the formation of a tungsten film or tungsten oxide film on the intended object. Following this, a seed layer is formed through the application of heat and the introduction of an aminosilane-based gas to the surface of the tungsten structure. The final step includes the deposition of a silicon oxide film on the seed layer, achieved by simultaneously supplying a silicon material gas, which includes silicon, along with an oxidizing agent. This innovative approach is crucial for enhancing the properties of the layers formed during the manufacturing processes in semiconductor technologies.

Career Highlights

Throughout his career, Pao-Hwa Chou has made significant strides while working with prominent companies such as Tokyo Electron Limited and IBM. His tenure at these organizations allowed him to refine his expertise in material sciences and film deposition techniques, contributing to many critical advancements in the industry.

Collaborations

Chou's journey has also been enriched by collaborations with esteemed colleagues, including Kazuhide Hasebe and Masanobu Matsunaga. Working alongside these innovators has undoubtedly influenced his research and development efforts, leading to the creation of impactful technologies in the field.

Conclusion

Pao-Hwa Chou's substantial contributions through his patents, particularly in film-forming methods, reflect his commitment to innovation and excellence in technology. As he continues to explore new avenues and advancements, his work remains integral to the progress of materials science and its applications in various industrial sectors.

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