The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 04, 2014
Filed:
Mar. 31, 2010
David L. O'meara, Poughkeepsie, NY (US);
Anthony Dip, Cedar Creek, TX (US);
Aelan Mosden, Poughkeepsie, NY (US);
Pao-hwa Chou, Kofu, JP;
Richard a Conti, Katonah, NY (US);
David L. O'Meara, Poughkeepsie, NY (US);
Anthony Dip, Cedar Creek, TX (US);
Aelan Mosden, Poughkeepsie, NY (US);
Pao-Hwa Chou, Kofu, JP;
Richard A Conti, Katonah, NY (US);
Tokyo Electron Limited, Tokyo, JP;
International Business Machines Corporation, Armonk, NY (US);
Abstract
A semiconducting device with a dual sidewall spacer and method of forming are provided. The method includes: depositing a first spacer layer over a patterned structure, the first spacer layer having a seam propagating through a thickness of the first spacer layer near an interface region of a surface of the substrate and a sidewall of the patterned structure, etching the first spacer layer to form a residual spacer at the interface region, where the residual spacer coats less than the entirety of the sidewall of the patterned structure, depositing a second spacer layer on the residual spacer and on the sidewall of the patterned structure not coated by the residual spacer, the second spacer layer being seam-free on the seam of the residual spacer, and etching the second spacer layer to form a second spacer coating the residual spacer and coating the sidewall of the patterned structure not coated by the residual spacer.