David L O'Meara

USPTO Granted Patents = 44 (Patent Applications = 10)

Average Co-Inventor Count = 4.3

ph-index = 9

Forward Citations = 621(Granted Patents)

Location History:

Austin, TX (US) (1999 - 2004)
Poughkeepsie, NY (US) (2005 - 2014)
Albany, NY (US) (2014 - 2023)

Company Filing History:

36 out of 10,295

Tokyo Electron Limited

International Business Machines Corporation

patents

where one patent can have more than one assignee

Years Active: 1999-2025

where 'Filed Patents' based on already Granted Patents

44 patents (USPTO):Sort by Forward Citations

Abstract keywords

1. 12451354 - Double patterning method of patterning a substrate (2025-10-21),

2. 12400872 - Sacrificial capping layer for gate protection (2025-08-26),

3. 11823910 - Systems and methods for improving planarity using selective atomic layer etching (ALE) (2023-11-21),

4. 11742241 - ALD (atomic layer deposition) liner for via profile control and related applications (2023-08-29),

5. 11651967 - Non-atomic layer deposition (ALD) method of forming sidewall passivation layer during high aspect ratio carbon layer etch (2023-05-16),

6. 11621190 - Method for filling recessed features in semiconductor devices with a low-resistivity metal (2023-04-04),

7. 11621164 - Method for critical dimension (CD) trim of an organic pattern used for multi-patterning purposes (2023-04-04),

8. 11567407 - Method for globally adjusting spacer critical dimension using photo-active self-assembled monolayer (2023-01-31),

9. 11532517 - Localized etch stop layer (2022-12-20),

10. 11417526 - Multiple patterning processes (2022-08-16),

11. 11195723 - Non-atomic layer deposition (ALD) method of forming sidewall passivation layer during high aspect ratio carbon layer etch (2021-12-07),

12. 11164781 - ALD (atomic layer deposition) liner for via profile control and related applications (2021-11-02),

13. 11024535 - Method for filling recessed features in semiconductor devices with a low-resistivity metal (2021-06-01),

14. 10978307 - Deposition process (2021-04-13),

15. 10964587 - Atomic layer deposition for low-K trench protection during etch (2021-03-30),

Title: The Innovative Journey of David L O'Meara

Introduction: David L O'Meara, a distinguished inventor hailing from Albany, NY, has made significant contributions to the field of technology through his groundbreaking innovations.

Latest Patents: David L O'Meara holds several patents in various technological domains, showcasing his versatility and ingenuity in inventing cutting-edge solutions for complex problems.

Career Highlights: With a career spanning over two decades, David L O'Meara has consistently pushed the boundaries of innovation, leading to the development of revolutionary products that have impacted industries worldwide.

Collaborations: Throughout his career, David L O'Meara has collaborated with leading tech companies, research institutions, and universities, fostering a culture of innovation and knowledge-sharing to drive progress in the field.

Conclusion: David L O'Meara's relentless pursuit of innovation and his passion for creating transformative technologies have solidified his reputation as a visionary inventor, inspiring the next generation of innovators to push the limits of what is possible.

This text is generated by artificial intelligence and may not be accurate.

Please report any incorrect information to support@idiyas.com

10 patents pending:

Please report any incorrect information to support@idiyas.com

Inventor’s Patent Attorneys refers to legal professionals with specialized expertise in representing inventors throughout the patent process. These attorneys assist inventors in navigating the complexities of patent law, including filing patent applications, conducting patent searches, and protecting intellectual property rights. They play a crucial role in helping inventors secure patents for their innovative creations.