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David L O'Meara

USPTO Granted Patents = 44 (Patent Applications = 10)

Average Co-Inventor Count = 4.3

ph-index = 9

Forward Citations = 621(Granted Patents)

Location History:

Austin, TX (US) (1999 - 2004)
Poughkeepsie, NY (US) (2005 - 2014)
Albany, NY (US) (2014 - 2023)

Company Filing History:

36 out of 10,326

Tokyo Electron Limited

International Business Machines Corporation

patents

where one patent can have more than one assignee

Years Active: 1999-2025

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Areas of Expertise:

Atomic Layer Deposition

Semiconductor Devices

Multi-Patterning Processes

Selective Atomic Layer Etching

Memory Cells

Ultra-Thin Oxide Layers

Ruthenium Metal Features

Critical Dimension Control

Interfacial Oxidation Process

Gate Stack Formation

Spacer Material Modification

Low-Resistivity Metal Fill

44 patents (USPTO):Sort by Forward CitationsExplore Patents

1. 12451354 - Double patterning method of patterning a substrate (2025-10-21),

2. 12400872 - Sacrificial capping layer for gate protection (2025-08-26),

3. 11823910 - Systems and methods for improving planarity using selective atomic layer etching (ALE) (2023-11-21),

4. 11742241 - ALD (atomic layer deposition) liner for via profile control and related applications (2023-08-29),

5. 11651967 - Non-atomic layer deposition (ALD) method of forming sidewall passivation layer during high aspect ratio carbon layer etch (2023-05-16),

6. 11621190 - Method for filling recessed features in semiconductor devices with a low-resistivity metal (2023-04-04),

7. 11621164 - Method for critical dimension (CD) trim of an organic pattern used for multi-patterning purposes (2023-04-04),

8. 11567407 - Method for globally adjusting spacer critical dimension using photo-active self-assembled monolayer (2023-01-31),

9. 11532517 - Localized etch stop layer (2022-12-20),

10. 11417526 - Multiple patterning processes (2022-08-16),

11. 11195723 - Non-atomic layer deposition (ALD) method of forming sidewall passivation layer during high aspect ratio carbon layer etch (2021-12-07),

12. 11164781 - ALD (atomic layer deposition) liner for via profile control and related applications (2021-11-02),

13. 11024535 - Method for filling recessed features in semiconductor devices with a low-resistivity metal (2021-06-01),

14. 10978307 - Deposition process (2021-04-13),

15. 10964587 - Atomic layer deposition for low-K trench protection during etch (2021-03-30),

Title: The Innovative Journey of David L O'Meara

Introduction: David L O'Meara, a distinguished inventor hailing from Albany, NY, has made significant contributions to the field of technology through his groundbreaking innovations.

Latest Patents: David L O'Meara holds several patents in various technological domains, showcasing his versatility and ingenuity in inventing cutting-edge solutions for complex problems.

Career Highlights: With a career spanning over two decades, David L O'Meara has consistently pushed the boundaries of innovation, leading to the development of revolutionary products that have impacted industries worldwide.

Collaborations: Throughout his career, David L O'Meara has collaborated with leading tech companies, research institutions, and universities, fostering a culture of innovation and knowledge-sharing to drive progress in the field.

Conclusion: David L O'Meara's relentless pursuit of innovation and his passion for creating transformative technologies have solidified his reputation as a visionary inventor, inspiring the next generation of innovators to push the limits of what is possible.

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