The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 30, 2021
Filed:
May. 17, 2019
Applicant:
Tokyo Electron Limited, Tokyo, JP;
Inventors:
Yen-Tien Lu, Albany, NY (US);
David O'Meara, Albany, NY (US);
Angelique Raley, Albany, NY (US);
Xinghua Sun, Albany, NY (US);
Assignee:
Tokyo Electron Limited, Tokyo, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/768 (2006.01); H01L 21/762 (2006.01); H01L 21/308 (2006.01);
U.S. Cl.
CPC ...
H01L 21/76802 (2013.01); H01L 21/3086 (2013.01); H01L 21/76224 (2013.01);
Abstract
An atomic layer deposition (ALD) technique is used to deposit one or more layers on hard mask layers and the sidewalls of low-K dielectric trench as part of the trench etch process. The ALD layer(s) can prevent the hard mask from being eroded during various hard mask open processes. Further, the ALD layer(s) may be utilized to prevent the low-K dielectric sidewall from being laterally etched during the low-K dielectric trench etch. Hence, better control of the trench profile and better critical dimension control may be provided.