The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 20, 2022
Filed:
Feb. 04, 2020
Tokyo Electron Limited, Tokyo, JP;
Yun Han, Albany, NY (US);
Andrew Metz, Albany, NY (US);
Xinghua Sun, Albany, NY (US);
David L. O'Meara, Albany, NY (US);
Kandabara Tapily, Albany, NY (US);
Henan Zhang, Albany, NY (US);
Shan Hu, Albany, NY (US);
Tokyo Electron Limited, Tokyo, JP;
Abstract
In one embodiment, a method includes providing a substrate comprising a source/drain contact region and a dummy gate, forming a first etch stop layer aligned to the source/drain contact region, where the first etch stop layer does not cover the dummy gate. The method may include forming a second etch stop layer over the first etch stop layer, the second etch stop layer covering the first etch stop layer and the dummy gate. The method may include converting the dummy gate to a metal gate. The method may include removing the second etch stop layer using a plasma etching process. The method may include removing the first etch stop layer.