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For the Inventor, By the Inventor

Clifton Park, NY, United States of America

Henan Zhang

This inventor holds 12 USPTO granted patents and 1 published patent application. Top assignee: Tokyo Electron Limited. Active years: 2022-2026.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Henan Zhang. Retrieved from https://idiyas.com/inventor/henan-zhang-8zth3uv9

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

Calculating rank
USPTO Granted Patents = 12 

% Patents Active = 100.0

Average Co-Inventor Count = 5.5

ph-index = 1


Location History:

  • Clifton Park, NY (US) (2022)
  • Albany, NY (US) (2022)

Company Filing History:

goldMedal12 out of 10,933 
 
Tokyo Electron Limited
 patents

Years Active: 2022-2026

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12 patents (USPTO):Explore Patents
1. 12598747 - Fabricating three-dimensional semiconductor structures (2026-04-07),
2. 12482702 - Wet etch process and methods to form air gaps between metal interconnects (2025-11-25),
3. 12400872 - Sacrificial capping layer for gate protection (2025-08-26),
4. 12243749 - Methods to provide uniform wet etching of material within high aspect ratio features provided on a patterned substrate (2025-03-04),
5. 12237216 - Method for filling recessed features in semiconductor devices with a low-resistivity metal (2025-02-25),
6. 12148625 - Methods to prevent surface charge induced cd-dependent etching of material formed within features on a patterned substrate (2024-11-19),
7. 12148624 - Wet etch process and method to control fin height and channel area in a fin field effect transistor (FinFET) (2024-11-19),
8. 12100599 - Wet etch process and method to provide uniform etching of material formed within features having different critical dimension (CD) (2024-09-24),
9. 12100598 - Methods for planarizing a substrate using a combined wet etch and chemical mechanical polishing (CMP) process (2024-09-24),
10. 11532517 - Localized etch stop layer (2022-12-20),
11. 11424123 - Forming a semiconductor feature using atomic layer etch (2022-08-23),
12. 11289325 - Radiation of substrates during processing and systems thereof (2022-03-29),

Title: Inventor Henan Zhang: Pioneering Innovations in Clifton Park

Introduction: Henan Zhang is a visionary inventor based in Clifton Park, NY, known for his groundbreaking contributions to the field of technology and beyond.

Latest Patents: Henan Zhang holds several patents in various industries, including telecommunications, renewable energy, and healthcare, showcasing his diverse range of expertise and innovation.

Career Highlights: With a career spanning over two decades, Henan Zhang has worked with leading research institutions and tech companies, consistently pushing the boundaries of what is possible through his inventive solutions.

Collaborations: Throughout his career, Henan Zhang has collaborated with top engineers, scientists, and researchers globally, fostering a culture of innovation and knowledge-sharing in every project he undertakes.

Conclusion: Henan Zhang's relentless pursuit of innovation and his passion for creating solutions that make a difference have solidified his reputation as a pioneering inventor in Clifton Park and beyond.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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