The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Mar. 04, 2025

Filed:

Sep. 26, 2022
Applicant:

Tokyo Electron Limited, Tokyo, JP;

Inventors:

Shan Hu, Albany, NY (US);

Henan Zhang, Albany, NY (US);

Sangita Kumari, Albany, NY (US);

Peter Delia, Albany, NY (US);

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/306 (2006.01);
U.S. Cl.
CPC ...
H01L 21/30604 (2013.01);
Abstract

Embodiments of a wet etch process and methods are disclosed herein to provide uniform wet etching of material within high aspect ratio features. In the present disclosure, a wet etch process is used to etch material within high aspect ratio features, such as deep trenches and holes, provided on a patterned substrate. Uniform wet etching is provided in the present disclosure by ensuring that wall surfaces of the material being etched (or wall surfaces adjacent to the material being etched) exhibit a neutral surface charge when exposed to the etch solution used to etch the material.


Find Patent Forward Citations

Hu, Shan. (2025). Methods to provide uniform wet etching of material within high aspect ratio features provided on a patterned substrate (U.S. Patent No. 12243749). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/12243749

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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