The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Nov. 19, 2024

Filed:

Sep. 16, 2022
Applicant:

Tokyo Electron Limited, Tokyo, JP;

Inventors:

Shan Hu, Albany, NY (US);

Henan Zhang, Albany, NY (US);

Sangita Kumari, Albany, NY (US);

Peter Delia, Albany, NY (US);

Robert Clark, Fremont, CA (US);

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/311 (2006.01); H01L 21/306 (2006.01); H01L 21/3213 (2006.01);
U.S. Cl.
CPC ...
H01L 21/31111 (2013.01); H01L 21/30604 (2013.01); H01L 21/32134 (2013.01);
Abstract

Embodiments of a wet etch process and methods are disclosed herein to provide uniform wet etching of material formed within features (e.g., trenches, holes, slits, etc.), and on more planar areas of a patterned substrate, when a critical dimension (CD) of the features is relatively small compared to the more planar areas of the patterned substrate. In the present disclosure, uniform wet etching is provided by ensuring that wall surfaces adjacent to the material being etched exhibit a neutral surface charge when exposed to the etch solution used to etch the material.


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