The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Mar. 29, 2022

Filed:

Feb. 19, 2021
Applicant:

Tokyo Electron Limited, Tokyo, JP;

Inventors:

Michael Edley, Philadelphia, PA (US);

Xinghua Sun, Clifton Park, NY (US);

Yen-Tien Lu, Hillsboro, OR (US);

Angelique Raley, Albany, NY (US);

Henan Zhang, Clifton Park, NY (US);

Hiroyuki Suzuki, Kumato, JP;

Shan Hu, Mechanicville, NY (US);

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/02 (2006.01); H01L 21/311 (2006.01); H01L 21/67 (2006.01);
U.S. Cl.
CPC ...
H01L 21/02063 (2013.01); H01L 21/31116 (2013.01); H01L 21/31138 (2013.01); H01L 21/67069 (2013.01); H01L 21/67115 (2013.01); H01L 21/67155 (2013.01);
Abstract

A method for processing a substrate includes performing a first etch process to form a plurality of partial features in a dielectric layer disposed over the substrate; performing an irradiation process to irradiate the substrate with ultra-violet radiation having a wavelength between 100 nm and 200 nm; and after the irradiation process, performing a second etch process to form a plurality of features from the plurality of partial features.


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