The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
May. 16, 2023

Filed:

Oct. 29, 2021
Applicant:

Tokyo Electron Limited, Tokyo, JP;

Inventors:

Shihsheng Chang, Albany, NY (US);

David O'Meara, Albany, NY (US);

Andrew Metz, Albany, NY (US);

Yun Han, Albany, NY (US);

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/306 (2006.01); H01L 21/3065 (2006.01); H01L 21/033 (2006.01); H01J 37/305 (2006.01); H01J 37/32 (2006.01); H01L 21/02 (2006.01);
U.S. Cl.
CPC ...
H01L 21/3065 (2013.01); H01J 37/3053 (2013.01); H01J 37/32082 (2013.01); H01L 21/02115 (2013.01); H01L 21/0337 (2013.01);
Abstract

Improved process flows and methods are provided herein for forming a passivation layer on sidewall surfaces of openings formed in an amorphous carbon layer (ACL) to avoid bowing during an ACL etch process. More specifically, improved process flows and methods are provided to form a silicon-containing passivation layer on sidewall surfaces of the openings created within the ACL without utilizing atomic layer deposition (ALD) techniques or converting the silicon-containing passivation layer to an oxide or a nitride. As such, the improved process flows and methods disclosed herein may be used to protect the sidewall surfaces of the ACL and prevent bowing during the ACL etch process, while also reducing processing time and improving throughput.


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