The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 10, 2012
Filed:
Nov. 26, 2010
Masanobu Matsunaga, Nirasaki, JP;
Keisuke Suzuki, Nirasaki, JP;
Jaehyuk Jang, Nirasaki, JP;
Pao-hwa Chou, Nirasaki, JP;
Masato Yonezawa, Nirasaki, JP;
Masayuki Hasegawa, Nirasaki, JP;
Kazuhide Hasebe, Nirasaki, JP;
Masanobu Matsunaga, Nirasaki, JP;
Keisuke Suzuki, Nirasaki, JP;
Jaehyuk Jang, Nirasaki, JP;
Pao-Hwa Chou, Nirasaki, JP;
Masato Yonezawa, Nirasaki, JP;
Masayuki Hasegawa, Nirasaki, JP;
Kazuhide Hasebe, Nirasaki, JP;
Tokyo Electron Limited, Tokyo, JP;
Abstract
A film formation method includes setting a target object at a temperature of 150 to 550° C., the target object being placed inside the process container configured to hold a vacuum state therein, and then, repeating a cycle alternately including a first supply step and a second supply step a plurality of times to form a silicon nitride film on the target object. The first supply step is a step of supplying monochlorosilane gas as an Si source into the process container while setting the process container at a pressure of 66.65 to 666.5 Pa therein. The second supply step is a step of supplying a nitrogen-containing gas as a nitriding gas into the process container.