EPO Patents = 1

Average Co-Inventor Count = 3.4

ph-index = 22

Forward Citations = 2,849(Granted Patents)

Forward Citations (Not Self Cited) = 2,822(Dec 10, 2025)

Inventors with similar research interests:

Location History:

Shirane-machi, JP (1998 - 2002)
Minato-Ku, JP (2009)
Tokyo-To, JP (2006 - 2010)
Tokyo, JP (2006 - 2010)
Minamialps, JP (2007 - 2013)
Narasaki, JP (2015)
Nirasaki, JP (2001 - 2020)
Yamanashi, JP (2010 - 2022)

Company Filing History:

90 out of 10,341

Tokyo Electron Limited

patents

1 out of 3,191

Air Products and Chemicals, Inc.

Fuji Electric Co., Ltd.

Tokyo Electron Limi Ted

patents

where one patent can have more than one assignee

Years Active: 1998-2025

Loading Chart...

Areas of Expertise:

Film Forming Method

Semiconductor Production Apparatus

Film Deposition Apparatus

Mask Pattern Forming Method

Plasma Processing Apparatus

Silicon Nitride Film

Thin Film Formation

Amorphous Silicon Film

Vertical Substrate Processing

Trench-Filling Method

Micro Pattern Forming

Oxidation Method

92 patents (USPTO):Sort by Forward CitationsExplore Patents

1. 12359308 - Film forming method and semiconductor production apparatus (2025-07-15),

2. 11404272 - Film deposition apparatus for fine pattern forming (2022-08-02),

3. 11404271 - Film deposition apparatus for fine pattern forming (2022-08-02),

4. 10879066 - Mask pattern forming method, fine pattern forming method, and film deposition apparatus (2020-12-29),

5. 10822714 - Method of growing crystal in recess and processing apparatus used therefor (2020-11-03),

6. 10191378 - Mask pattern forming method, fine pattern forming method, and film deposition apparatus (2019-01-29),

7. 10176992 - Mask pattern forming method, fine pattern forming method, and film deposition apparatus (2019-01-08),

8. 10141187 - Mask pattern forming method, fine pattern forming method, and film deposition apparatus (2018-11-27),

9. 9970110 - Plasma processing apparatus (2018-05-15),

10. 9920422 - Method and apparatus of forming silicon nitride film (2018-03-20),

11. 9865457 - Nitride film forming method using nitrading active species (2018-01-09),

12. 9758865 - Silicon film forming method, thin film forming method and cross-sectional shape control method (2017-09-12),

13. 9613838 - Batch-type vertical substrate processing apparatus and substrate holder (2017-04-04),

14. 9353442 - Apparatus for forming silicon-containing thin film (2016-05-31),

15. 9343292 - Stacked semiconductor device, and method and apparatus of manufacturing the same (2016-05-17),

Title: The Innovative Mind of Kazuhide Hasebe

Introduction: Kazuhide Hasebe is a pioneering inventor hailing from Nirasaki, Japan, known for his groundbreaking contributions to the field of technology and innovation.

Latest Patents: Kazuhide Hasebe holds several patents in various technological domains, showcasing his continuous dedication to pushing the boundaries of innovation.

Career Highlights: Throughout his illustrious career, Kazuhide Hasebe has consistently demonstrated a remarkable ability to transform ideas into tangible inventions that have had a significant impact on the industry.

Collaborations: Kazuhide Hasebe has collaborated with leading research institutions, universities, and innovative companies, further solidifying his reputation as a visionary inventor with a passion for creating cutting-edge solutions.

Conclusion: Kazuhide Hasebe's relentless pursuit of innovation and his remarkable contributions to the field make him a true trailblazer in the world of inventors, inspiring future generations to think outside the box and pursue their inventive dreams.

This text is generated by artificial intelligence and may not be accurate.

Please report any incorrect information to support@idiyas.com

1 patent (EPO):

Please report any incorrect information to support@idiyas.com