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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 11404272 B1

PDFFull Text
Date of Patent:
Aug. 02, 2022

Filed:

Dec. 11, 2018

Film deposition apparatus for fine pattern forming

Applicant:

Tokyo Electron Limited, Tokyo, JP;

Inventors:

Kazuhide Hasebe, Yamanashi, JP;

Shigeru Nakajima, Yamanashi, JP;

Jun Ogawa, Yamanashi, JP;

Hiroki Murakami, Yamanashi, JP;

Assignee:

Tokyo Electron Limited, Tokyo, JP;

Attorney:

IPUSA, PLLC

Primary Examiner:

Benjamin Kendall

Assistant Examiner:

Kurt Sweely

Int. Cl.
CPC ...
C23C 16/455 (2006.01); H01J 37/32 (2006.01); H01L 21/027 (2006.01); C23C 16/02 (2006.01); C23C 16/40 (2006.01); H01L 21/02 (2006.01); H01L 21/033 (2006.01); H01L 21/311 (2006.01); H01L 21/3213 (2006.01); H01L 21/768 (2006.01); H01L 21/316 (2006.01); G03F 7/40 (2006.01);
U.S. Cl.
CPC ...
H01L 21/027 (2013.01); C23C 16/02 (2013.01); C23C 16/402 (2013.01); C23C 16/403 (2013.01); C23C 16/45536 (2013.01); G03F 7/40 (2013.01); H01J 37/3244 (2013.01); H01J 37/32091 (2013.01); H01J 37/32834 (2013.01); H01L 21/0228 (2013.01); H01L 21/0274 (2013.01); H01L 21/02164 (2013.01); H01L 21/02178 (2013.01); H01L 21/02219 (2013.01); H01L 21/02274 (2013.01); H01L 21/0337 (2013.01); H01L 21/0338 (2013.01); H01L 21/31138 (2013.01); H01L 21/31144 (2013.01); H01L 21/31608 (2013.01); H01L 21/31616 (2013.01); H01L 21/32139 (2013.01); H01L 21/76816 (2013.01);
Abstract

In a mask pattern forming method, a resist film is formed over a thin film, the resist film is processed into resist patterns having a predetermined pitch by photolithography, slimming of the resist patterns is performed, and an oxide film is formed on the thin film and the resist patterns after an end of the slimming step in a film deposition apparatus by supplying a source gas and an oxygen radical or an oxygen-containing gas. In the mask pattern forming method, the slimming and the oxide film forming are continuously performed in the film deposition apparatus.

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