The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 12, 2017
Filed:
Jul. 30, 2014
Tokyo Electron Limited, Tokyo, JP;
Kazuhide Hasebe, Nirasaki, JP;
Kazuya Takahashi, Nirasaki, JP;
Katsuhiko Komori, Nirasaki, JP;
Yoshikazu Furusawa, Nirasaki, JP;
Mitsuhiro Okada, Nirasaki, JP;
Hiroyuki Hayashi, Nirasaki, JP;
Akinobu Kakimoto, Nirasaki, JP;
TOKYO ELECTRON LIMITED, Tokyo, JP;
Abstract
The present disclosure provides a silicon film forming method for forming a silicon film on a workpiece having a processed surface, including: forming a seed layer by supplying a high-order aminosilane-based gas containing two or more silicon atoms in a molecular formula onto the processed surface and by having silicon adsorbed onto the processed surface; and forming a silicon film by supplying a silane-based gas not containing an amino group onto the seed layer and by depositing silicon onto the seed layer, wherein, when forming a seed layer, a process temperature is set within a range of 350 degrees C. or lower and a room temperature or higher.