Tokyo Electron Limited

Fuji Electric Co., Ltd.

Air Products and Chemicals, Inc.

Tohoku University

Horiba, Ltd.

Tokyo Electron Limi Ted

Kazuhide Hasebe

Shigeru Nakajima

Pao-Hwa Chou

Jun Ogawa

Mitsuhiro Okada

Akinobu Kakimoto

Hiroki Murakami

Nobutake Nodera

Takehiko Fujita

Masanobu Matsunaga

Katsuhiko Komori

Keisuke Suzuki

Mitsuaki Iwashita

Jun Sato

Takuya Sugawara

Reiji Niino

Kota Umezawa

Tomonori Fujiwara

Chaeho Kim

Daisuke Suzuki

Hiroyuki Yamamoto

Toshio Nakanishi

Masaki Kurokawa

Masaru Sasaki

Shigenori Ozaki

Genji Nakamura

Seiji Matsuyama

Yuichiro Morozumi

Yoshikazu Furusawa

Masato Yonezawa

Takahito Umehara

Yoshihide Tada

Kazuya Yamamoto

Dong-Kyun Choi

Yutaka Takahashi

Takanori Saito

Kenichi Yamaga

Satoshi Takagi

Atsushi Endo

Tomohisa Shimazu

Toshiyuki Ikeuchi

Akira Shimizu

Akitake Tamura

Katsushige Harada

Yukimasa Saito

Toshiyuki Makiya

Hisaei Osanai

Kentaro Kadonaga

Norifumi Kimura

Masayuki Hasegawa

Tsuyoshi Takizawa

Yasushi Akasaka

Kenji Tago

Yoshihiro Ishida

Hirotake Fujita

Atsumi Ito

Tadahiro Ohmi

Xinjian Lei

Tsuyoshi Moriya

Manchao Xiao

Satoshi Tanaka

Yoshitaka Tsunashima

Seiji Inumiya

Eugene Joseph Karwacki, Jr

Bing Han

Noriaki Fukiage

Akinobu Teramoto

Teruyuki Hayashi

Kohei Fukushima

Hirokazu Ueda

Yamato Tonegawa

Masakazu Minami

Masahiko Tomita

Hansong Cheng

Masahisa Watanabe

Hiroyuki Hayashi

Hiroshi Kambayashi

Liu Yang

Toshiki Takahashi

Takashi Chiba

Yusuke Suzuki

Katsumi Nishimura

Haruhiko Furuya

Tetsuya Shibata

Kazuya Takahashi

Masayuki Imai

Yoshihiro Kato

Tomoyuki Obu

Toshihiko Takahashi

Yosuke Watanabe

Yoichiro Chiba

Atsushi Endoh

Makoto Umeki

Kiyotaka Kikuchi

Byounghoon Lee

Jaehyuk Jang

Koto Umezawa

Eun-jo Lee

Jun Satoh

Hao-Hsiang Chang

A film forming method is provided. In the film forming method, a mask is prepared based on a measurement result of a surface state of a substrate. The mask is transferred into a process chamber and the substrate is transferred into the process chamber. Then, a film is formed on a back surface of the substrate while the mask is disposed onto the back surface of the substrate.

Film forming method and semiconductor production apparatus

In a mask pattern forming method, a resist film is formed over a thin film, the resist film is processed into resist patterns having a predetermined pitch by photolithography, slimming of the resist patterns is performed, and an oxide film is formed on the thin film and the resist patterns after an end of the slimming step in a film deposition apparatus by supplying a source gas and an oxygen radical or an oxygen-containing gas. In the mask pattern forming method, the slimming and the oxide film forming are continuously performed in the film deposition apparatus.

Film deposition apparatus for fine pattern forming

Mask pattern forming method, fine pattern forming method, and film deposition apparatus

A method of growing a crystal in a recess in a substrate on which an insulating film having the recess is formed, includes: forming a first film on the insulating film at a thickness as not to completely fill the recess; etching the first film by an etching gas to remain the first film only in a bottom portion of the recess; annealing the substrate such that the first film in the bottom portion is modified into a crystalline layer; forming a second film on the insulating film and a surface of the crystalline layer at a thickness as not to completely fill the recess; annealing the substrate such that the second film is crystallized from the bottom portion through a solid phase epitaxial growth to form an epitaxial crystal layer; and etching and removing the second film remaining on the substrate by an etching gas.

Method of growing crystal in recess and processing apparatus used therefor

A plasma processing apparatus includes a plasma generation chamber in which plasma active species are generated, a process chamber configured to accommodate processing target objects stacked in a vertical direction, the plasma active species generated in the plasma generation chamber being supplied into the process chamber, a plasma source gas supply pipe disposed inside the plasma generation chamber and extending in the vertical direction, a plasma source gas being introduced from one end of the plasma source gas supply pipe and discharged through gas discharge holes formed in the plasma source gas supply pipe in the vertical direction, and a pair of plasma electrodes, arranged to face each other, configured to apply an electric field to the plasma source gas discharged into the plasma generation chamber. A size of a discharge area interposed between the pair of plasma electrodes is varied in the vertical direction.

Plasma processing apparatus

Provided is a method of forming a silicon nitride film on a surface to be processed of a target object, which includes: repeating a first process a first predetermined number of times, the process including supplying a silicon source gas containing silicon toward the surface to be processed and supplying a decomposition accelerating gas containing a material for accelerating decomposition of the silicon source gas toward the surface to be processed; performing a second process of supplying a nitriding gas containing nitrogen toward the surface to be processed a second predetermine number of times; and performing one cycle a third predetermined number of times, the one cycle being a sequence including the repetition of the first process and the performance of the second process to form the silicon nitride film on the surface to be processed.

Method and apparatus of forming silicon nitride film

There is provided a method of forming a nitride film, including: repeating a cycle including an adsorption process of adsorbing a film forming precursor gas onto a substrate having a surface in which a fine recess is formed, the film forming precursor gas containing an element and chlorine constituting a nitride film to be formed; and a nitriding process of nitriding the adsorbed film forming precursor gas with nitriding active species, to form the nitride film in the fine recess. The nitriding process includes: generating NH* active species and N* active species as a nitriding active species; and controlling concentrations of the NH* active species and the N* active species to vary an area where the film forming precursor gas is adsorbed in the fine recess.

Nitride film forming method using nitrading active species

The present disclosure provides a silicon film forming method for forming a silicon film on a workpiece having a processed surface, including: forming a seed layer by supplying a high-order aminosilane-based gas containing two or more silicon atoms in a molecular formula onto the processed surface and by having silicon adsorbed onto the processed surface; and forming a silicon film by supplying a silane-based gas not containing an amino group onto the seed layer and by depositing silicon onto the seed layer, wherein, when forming a seed layer, a process temperature is set within a range of 350 degrees C. or lower and a room temperature or higher.

Silicon film forming method, thin film forming method and cross-sectional shape control method

A batch-type vertical substrate processing apparatus includes a processing chamber into which a substrate holder configured to stack and hold a plurality of target substrates in a height direction is inserted; and a plurality of flanges formed to protrude from an inner wall of the processing chamber toward an internal space of the processing chamber along a planar direction and configured to divide the interior of the processing chamber into a plurality of processing subspaces along the height direction, wherein the flanges include insertion holes through which the substrate holder is inserted, and diameters of the insertion holes are small at an upper side of the processing chamber and become gradually larger toward a lower side of the processing chamber.

Batch-type vertical substrate processing apparatus and substrate holder

Provided is an apparatus for forming a silicon-containing thin film, the apparatus including a controller which is configured to control a process gas supplying mechanism, a heating device, and an exhauster to perform: forming a first seed layer on a base by adsorbing at least silicon included in an aminosilane-based gas on the base, using the aminosilane-based gas; forming a second seed layer on the first seed layer by depositing at least silicon included in a higher-order silane-based gas having an order that is equal to or higher than disilane, using the higher-order silane-based gas having an order that is equal to or higher than the disilane, wherein the first seed layer and the second seed layer form a dual seed layer; and forming the silicon-containing thin film on the dual seed layer.

Apparatus for forming silicon-containing thin film

Provided is a method of manufacturing a stacked semiconductor device, which includes forming a stacked film on a semiconductor substrate, the stacked film including a plurality of silicon oxide films and a plurality of silicon nitride films, which are alternately arranged on top of each other, and the stacked film being obtained by repeatedly performing a series of operations of forming the silicon oxide film on the semiconductor substrate using one of triethoxysilane, octamethylcyclotetrasiloxane, hexamethyldisilazane and diethylsilane gases, and forming the silicon nitride film on the formed silicon oxide film; etching the silicon nitride films in the stacked film; removing carbons contained in the silicon oxide films, which are not removed in the etching, to reduce a concentration of the carbons; and forming electrodes in regions where the silicon nitride films are etched in the etching.

Stacked semiconductor device, and method and apparatus of manufacturing the same

Growing community of inventors

Nirasaki, Japan

Kazuhide Hasebe