The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 15, 2012
Filed:
Aug. 06, 2010
Nobutake Nodera, Nirasaki, JP;
Masanobu Matsunaga, Nirasaki, JP;
Kazuhide Hasebe, Nirasaki, JP;
Koto Umezawa, Nirasaki, JP;
Pao-hwa Chou, Nirasaki, JP;
Nobutake Nodera, Nirasaki, JP;
Masanobu Matsunaga, Nirasaki, JP;
Kazuhide Hasebe, Nirasaki, JP;
Koto Umezawa, Nirasaki, JP;
Pao-Hwa Chou, Nirasaki, JP;
Tokyo Electron Limited, Tokyo, JP;
Abstract
Disclosed is a method for using a film formation apparatus to form a silicon nitride film by CVD on target substrates while suppressing particle generation. The apparatus includes a process container and an exciting mechanism attached on the process container. The method includes conducting a pre-coating process by performing pre-cycles and conducting a film formation process by performing main cycles. Each of the pre-cycles and main cycles alternately includes a step of supplying a silicon source gas and a step of supplying a nitriding gas with steps of exhausting gas from inside the process container interposed therebetween. The pre-coating process includes no period of exciting the nitriding gas by the exciting mechanism. The film formation process repeats a first cycle set that excites the nitriding gas by the exciting mechanism and a second cycle that does not excite the nitriding gas by the exciting mechanism.