The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 18, 2014
Filed:
Mar. 31, 2010
David L. O'meara, Poughkeepsie, NY (US);
Anthony Dip, Cedar Creek, TX (US);
Aelan Mosden, Poughkeepsie, NY (US);
Pao-hwa Chou, Kofu, JP;
Richard a Conti, Katonah, NY (US);
David L. O'Meara, Poughkeepsie, NY (US);
Anthony Dip, Cedar Creek, TX (US);
Aelan Mosden, Poughkeepsie, NY (US);
Pao-Hwa Chou, Kofu, JP;
Richard A Conti, Katonah, NY (US);
Tokyo Electron Limited, Tokyo, JP;
International Business Machines Corporation, Armonk, NY (US);
Abstract
A semiconducting device with a multilayer sidewall spacer and method of forming are described. In one embodiment, the method includes providing a substrate containing a patterned structure on a surface of the substrate and depositing a first spacer layer over the patterned structure at a first substrate temperature, where the first spacer layer contains a first material. The method further includes depositing a second spacer layer over the patterned substrate at a second substrate temperature that is different from the first substrate temperature, where the first and second materials contain the same chemical elements, and the depositing steps are performed in any order. The first and second spacer layers are then etched to form the multilayer sidewall spacer on the patterned structure.