The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 20, 2011
Filed:
Jan. 14, 2009
Kazuhide Hasebe, Yamanashi, JP;
Nobutake Nodera, Osaka, JP;
Masanobu Matsunaga, Yamanashi, JP;
Jun Satoh, Yamanashi, JP;
Pao-hwa Chou, Yamanashi, JP;
Kazuhide Hasebe, Yamanashi, JP;
Nobutake Nodera, Osaka, JP;
Masanobu Matsunaga, Yamanashi, JP;
Jun Satoh, Yamanashi, JP;
Pao-Hwa Chou, Yamanashi, JP;
Tokyo Electron Limited, Tokyo, JP;
Abstract
A film formation method is used for forming a silicon nitride film on a target substrate by repeating a plasma cycle and a non-plasma cycle a plurality of times, in a process field configured to be selectively supplied with a first process gas containing a silane family gas and a second process gas containing a nitriding gas and communicating with an exciting mechanism for exciting the second process gas to be supplied. The method includes obtaining a relation formula or relation table that represents relationship of a cycle mixture manner of the plasma cycle and the non-plasma cycle relative to a film quality factor of the silicon nitride film; determining a specific manner of the cycle mixture manner based on a target value of the film quality factor with reference to the relation formula or relation table; and arranging the film formation process in accordance with the specific manner.