The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 04, 2016
Filed:
Jul. 10, 2015
Applicant:
Tokyo Electron Limited, Tokyo, JP;
Inventors:
Jun Sato, Nirasaki, JP;
Pao-Hwa Chou, Nirasaki, JP;
Assignee:
TOKYO ELECTRON LIMITED, , JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
C23C 16/00 (2006.01); H01L 21/02 (2006.01); H01L 21/285 (2006.01); C23C 16/02 (2006.01); C23C 16/40 (2006.01); C23C 16/455 (2006.01);
U.S. Cl.
CPC ...
H01L 21/02164 (2013.01); C23C 16/0272 (2013.01); C23C 16/0281 (2013.01); C23C 16/402 (2013.01); C23C 16/45525 (2013.01); C23C 16/45553 (2013.01); H01L 21/02175 (2013.01); H01L 21/02211 (2013.01); H01L 21/02271 (2013.01); H01L 21/02299 (2013.01); H01L 21/02304 (2013.01); H01L 21/02312 (2013.01); H01L 21/28568 (2013.01);
Abstract
A film-forming method includes forming a tungsten film or a tungsten oxide film on an object to be processed, heating the object on which the tungsten film or the tungsten oxide film is formed, forming a seed layer on the tungsten film or the tungsten oxide film by supplying an aminosilane-based gas to a surface of the tungsten film or the tungsten oxide film, and forming a silicon oxide film on the seed layer by simultaneously supplying a silicon material gas including silicon and a gas including an oxidizing agent for oxidizing silicon.