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For the Inventor, By the Inventor

Austin, TX, United States of America

Olubunmi O Adetutu

This inventor holds 60 USPTO granted patents and 1 EPO patent, primarily in Semiconductor Technology (CPC class H01L). Top assignees: Freescale Semiconductor,inc., Motorola Corporation. Active years: 1998-2014.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Olubunmi O Adetutu. Retrieved from https://idiyas.com/inventor/olubunmi-o-adetutu

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

USPTO Granted Patents = 60

% Patents Active = 56.7


Average Co-Inventor Count = 3.1

ph-index = 17

Forward Citations = 1,684(Granted Patents)

Forward Citations (Not Self Cited) = 1,663(Dec 10, 2025)


Inventors with similar research interests:


Company Filing History:

goldMedal43 out of 5,491 
 
Freescale Semiconductor,inc.
 patents
silverMedal17 out of 20,290 
 
Motorola Corporation
 patents

Years Active: 1998-2014

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Areas of Expertise:
Gate Dielectrics
Non-Volatile Memory
Metal Gate Processes
Plasma Treatment
High-K Dielectrics
SOI Technology
Transistor Design
Semiconductor Fabrication
Stress Absorbent Structures
Nitridation Methods
Dual Metal Silicide
Active Regions
60 patents (USPTO):Explore Patents
1. 8659087 - Electronic device with a gate electrode having at least two portions (2014-02-25),
2. 8435898 - First inter-layer dielectric stack for non-volatile memory (2013-05-07),
3. 8426310 - Method of forming a shared contact in a semiconductor device (2013-04-23),
4. 8404594 - Reverse ALD (2013-03-26),
5. 8125032 - Modified hybrid orientation technology (2012-02-28),
6. 8030220 - Plasma treatment of a semiconductor surface for enhanced nucleation of a metal-containing layer (2011-10-04),
7. 7981808 - Method of forming a gate dielectric by in-situ plasma (2011-07-19),
8. 7868389 - Electronic device comprising a gate electrode including a metal-containing layer having one or more impurities (2011-01-11),
9. 7811891 - Method to control the gate sidewall profile by graded material composition (2010-10-12),
10. 7745298 - Method of forming a via (2010-06-29),
11. 7704821 - In-situ nitridation of high-k dielectrics (2010-04-27),
12. 7651935 - Process of forming an electronic device including active regions and gate electrodes of different compositions overlying the active regions (2010-01-26),
13. 7618902 - Plasma treatment of a semiconductor surface for enhanced nucleation of a metal-containing layer (2009-11-17),
14. 7579282 - Method for removing metal foot during high-k dielectric/metal gate etching (2009-08-25),
15. 7544575 - Dual metal silicide scheme using a dual spacer process (2009-06-09),

Sure, here is the article you requested:

Title: Olubunmi O Adetutu: Pioneering Innovation in Austin, TX

Introduction:

Olubunmi O Adetutu is a distinguished inventor based in Austin, TX, whose dedication to innovation and relentless pursuit of excellence have established him as a true pioneer in the world of invention. With an impressive track record of 60 patents, Adetutu's impact on various industries is undeniable, and his legacy as an inventor continues to inspire future generations of innovators.

Latest Patents:

Adetutu's latest patents showcase his expertise in cutting-edge technologies. One of his recent inventions includes the development of an electronic device with a gate electrode having at least two portions. This transistor structure enhances the performance of electronic devices by optimizing the effective work function in the finished transistor structure. Additionally, Adetutu has patented a first inter-layer dielectric stack for non-volatile memory, revolutionizing the way memory devices are designed and manufactured.

Career Highlights:

Throughout his career, Adetutu has made significant contributions to the tech industry through his work at renowned companies such as Freescale Semiconductor, Inc. and Motorola Corporation. His innovative spirit and technical expertise have played a vital role in shaping the future of technology and driving advancements in semiconductor devices.

Collaborations:

During his tenure at various companies, Adetutu has had the privilege of collaborating with talented professionals such as Dina H Triyoso and Hsing H Tseng. These partnerships have led to groundbreaking inventions and have further solidified Adetutu's reputation as a visionary inventor in the field.

Conclusion:

In conclusion, Olubunmi O Adetutu's remarkable journey as an inventor reflects his unwavering commitment to pushing the boundaries of innovation. His pioneering work in the tech industry has left an indelible mark, inspiring a new generation of inventors to pursue excellence and strive for breakthrough discoveries. Adetutu's legacy serves as a testament to the power of innovation and the profound impact it can have on shaping the future of technology.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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