The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 25, 2014
Filed:
Dec. 16, 2009
Olubunmi O. Adetutu, Austin, TX (US);
Tien Ying Luo, Austin, TX (US);
Narayanan C. Ramani, Austin, TX (US);
Olubunmi O. Adetutu, Austin, TX (US);
Tien Ying Luo, Austin, TX (US);
Narayanan C. Ramani, Austin, TX (US);
Freescale Semiconductor, Inc., Austin, TX (US);
Abstract
A transistor structure of an electronic device can include a gate dielectric layer and a gate electrode. The gate electrode can have a surface portion between the gate dielectric layer and the rest of the gate electrode. The surface portion can be formed such that another portion of the gate electrode primarily sets the effective work function in the finished transistor structure.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile